| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP12N50M2 is an N-channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage applications, featuring a maximum drain-source voltage (Vdss) of 500V and a continuous current rating of 10A.
Key electrical characteristics include a maximum Rds On of 380mOhm at 5A and 10V, a gate charge (Qg) of 15 nC at 10V, and an input capacitance (Ciss) of 560 pF at 100V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V.
This MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 85W (Tc).
The STP12N50M2 is a reliable component for various power switching and control applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
10A at case temperature.
-55°C to 150°C junction temperature.
TO-220-3 (through-hole).
Maximum 4V at 250µA drain current.
380 milliohms at 5A and 10V gate drive.
15 nC at 10V gate voltage.