| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,377 pcs
|
1377 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP12N120K5 is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage rating of 1200V and a continuous drain current of 12A at a case temperature of Tc.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 690mOhm at 6A and 10V, a gate charge (Qg) of 44.2nC at 10V, and an input capacitance (Ciss) of 1370pF at 100V. The gate-source voltage (Vgs) maximum is ±30V, with a threshold voltage (Vgs(th)) of 5V at 100µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 250W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The STP12N120K5 is mounted via a through-hole method and comes in a TO-220-3 package, with the supplier package also listed as TO-220.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP12N120K5 is 1200 V.
The continuous drain current is 12A, measured at the case temperature (Tc).
The maximum power dissipation is 250W, measured at the case temperature (Tc).
The Rds On is a maximum of 690mOhm when measured at 6A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The STP12N120K5 is an N-Channel MOSFET.
The STP12N120K5 is supplied in a TO-220-3 package.