| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 742 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STP120NH03L is an N-channel STripFET™ Power MOSFET featuring advanced design rules for high efficiency in DC-DC conversion applications. It is ideal for high output current requirements.
Key electrical specifications include a 30V drain-source voltage (Vdss) and a maximum continuous drain current of 60A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 5.5mOhm at 30A drain current and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 3V maximum at 250µA.
This MOSFET operates within a junction temperature range of -55°C to 175°C and has a total power dissipation of 110W at 25°C case temperature. It is housed in a TO-220 package and is suitable for through-hole mounting.
The device utilizes ST's proprietary STripFET™ technology, which reduces conduction and switching losses, making it suitable for demanding switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-220-3 (through-hole).
-55°C to 175°C.
60A.
5.5mOhm maximum at 30A, 10V.
110W.