| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,042 pcs
|
1042 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP120NF10 is an N-channel MOSFET manufactured by STMicroelectronics. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 110A at the case temperature.
This MOSFET features a low on-resistance of 10.5mOhm at 60A and 10V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 5200pF at 25V, and the gate charge (Qg) is 233nC at 10V. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 312W (Tc).
The STP120NF10 is packaged in a TO-220-3 configuration and is designed for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles. The device has a maximum gate-to-source voltage (Vgs) of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current (Id) is 110A at case temperature Tc.
The maximum on-resistance (Rds on) is 10.5mOhm at 60A drain current and 10V gate voltage.
The operating junction temperature range is -55°C to 175°C.
The device is housed in a TO-220-3 through-hole package, with supplier device package TO-220.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
It is an N-Channel MOSFET using Metal Oxide (MOSFET) technology.