| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP120N4F6 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 40V and can handle a continuous drain current (ID) of 80A at a case temperature.
With a low on-resistance (Rds On) of 4.3mOhm at 40A and 10V gate-source voltage, this MOSFET minimizes conduction losses, contributing to higher efficiency. The maximum power dissipation is rated at 110W (Tc), making it suitable for applications requiring significant power handling.
Operating within a wide temperature range of -55°C to 175°C (TJ), the STP120N4F6 is built for robust performance in various environments. It utilizes MOSFET (Metal Oxide) technology and comes in a standard TO-220-3 package, designed for through-hole mounting.
Key electrical parameters include an input capacitance (Ciss) of 3.85nF at 25V and a gate charge (Qg) of 65nC at 10V. The gate-to-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA. Switching characteristics include a turn-on delay of 20ns and a turn-off delay of 40ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-220-3 through-hole package.
-55°C to 175°C junction temperature.
80A at case temperature.
4.3mOhm maximum at 40A and 10V gate drive.
65nC at 10V gate voltage.
Rise time 70ns, fall time 20ns, turn-on delay 20ns, turn-off delay 40ns.