| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,020 pcs
|
14020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STP11NM80 is a single N-Channel MOSFET designed for power switching applications. It offers a high Drain-Source Voltage (Vdss) of 800V and can handle a continuous drain current (Id) of 11A at a case temperature (Tc).
The MOSFET has a low on-state resistance (Rds On) of 400mOhm, measured at 5.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage is ±30V.
With a maximum power dissipation of 150W (Tc) and an operating temperature range of -65°C to 150°C (TJ), this component is suitable for various demanding applications. It utilizes MOSFET (Metal Oxide) technology.
The STP11NM80 is packaged in a TO-220-3 configuration and features a Through Hole mounting type, making it suitable for standard PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
11A at case temperature (Tc).
400 mOhm at 5.5A drain current and 10V gate-source voltage.
43.6 nC at 10V gate-source voltage.
5V maximum at 250µA drain current.
TO-220-3 through-hole package (supplier device package TO-220).
-65°C to 150°C junction temperature.