| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,450 pcs
|
4450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP11N65M5 is an N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 650V and a continuous drain current capability of 9A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 480mOhm at 4.5A and 10V, an input capacitance of 644pF at 100V, and a gate charge of 17nC at 10V. The gate threshold voltage is 5V at 250µA, and the maximum gate-to-source voltage is ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 85W (Tc). It is constructed using MOSFET (Metal Oxide) technology and is suitable for through-hole mounting.
The STP11N65M5 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. It is packaged in a TO-220-3 case.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous drain current is 9A.
The Rds On is a maximum of 480mOhm at 4.5A and 10V.
The operating temperature is up to 150°C (TJ).
It is supplied in a TO-220-3 package.
It is designed for through-hole mounting.