| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP11N65M2 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, featuring a robust 650V drain-to-source voltage and a continuous drain current capability of 7A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 670mOhm at 3.5A and 10V, an input capacitance of 410pF, and a gate charge of 12.5nC. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).
This component utilizes MOSFET (Metal Oxide) technology and is packaged in a standard TO-220 package, suitable for through-hole mounting. Its specifications make it a reliable choice for various power electronics designs requiring efficient switching and high voltage handling.
The STP11N65M2 is RoHS3 compliant and has an MSL rating of 1, indicating its suitability for a wide range of environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650V.
The continuous drain current is 7A.
The operating temperature range is -55°C to 150°C.
It is available in a TO-220-3 package.
It is designed for through-hole mounting.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.