| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STP11N60DM2 is an N-Channel MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage rating of 600V and a continuous drain current capability of 10A at 25°C case temperature. The MOSFET features a low on-resistance of 420mOhm maximum at 5A and 10V gate-source voltage, along with a gate charge of 16.5nC maximum at 10V gate-source voltage.
Designed for through-hole mounting, this component comes in a standard TO-220-3 package. Its operating temperature range is from -55°C to 150°C (TJ). The MOSFET utilizes Metal Oxide technology and has a gate-to-source voltage limit of ±25V. It is suitable for applications requiring high voltage switching and power management.
Key electrical characteristics include an input capacitance of 614pF maximum at 100V drain-source voltage and a maximum power dissipation of 110W at 25°C case temperature. The STP11N60DM2 is specified with RoHS3 compliance and an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STP11N60DM2 is 600V.
The continuous drain current (Id) for the STP11N60DM2 is 10A.
The STP11N60DM2 is supplied in a TO-220-3 package.
The STP11N60DM2 is designed for through-hole mounting.
The operating temperature range for the STP11N60DM2 is -55°C to 150°C (TJ).