| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
128,011 pcs
|
128011 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
6,513 pcs
|
6513 pcs | On Request | 1 | On Request | On Request | 2050 | On Request | On Request | |
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP110N7F6 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vdss) of 68V and a continuous drain current (Id) of 110A at a case temperature (Tc).
This MOSFET utilizes Metal Oxide Semiconductor technology and has a low on-resistance (Rds On) of 6.5mOhm at 55A and 10V gate drive voltage. The gate charge (Qg) is 100 nC at 10V, and the input capacitance (Ciss) is 5850 pF at 25V.
Designed for through-hole mounting, the STP110N7F6 comes in a TO-220-3 package. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 176W (Tc).
The component is listed as RoHS3 compliant and has an MSL rating of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
68V.
TO-220-3 through-hole package.
-55°C to 175°C (junction temperature).
110A at Tc.
6.5mOhm maximum at 55A and 10V.
4V maximum at 250µA.
176W at Tc.