| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,210 pcs
|
2210 pcs | On Request | 1 | On Request | On Request | 1521+ | On Request | On Request | |
|
1,750 pcs
|
1750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP110N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power applications, offering a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 110A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 7mOhm at 55A and 10V gate-source voltage, and a gate charge (Qg) of 60nC at 10V. The operating temperature range is from -55°C to 175°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a TO-220-3 configuration. It is designed for through-hole mounting, making it suitable for various power switching and control applications where robust performance is required.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified from the database.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
It is available in a TO-220-3 package with through-hole mounting, and the supplier device package is TO-220.
The operating junction temperature range is -55°C to 175°C.
The maximum gate charge (Qg) at Vgs = 10V is 60 nC.
The maximum on-resistance (Rds On) is 7 milliohms at Id = 55A and Vgs = 10V.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.
The continuous drain current is 110A at the case temperature (Tc).