| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,745 pcs
|
5745 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP10NM60N is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 550mOhm at 4A and 10V, a gate threshold voltage (Vgs(th)) of 4V at 250µA, and a gate-to-source voltage (Vgs) range of ±25V. The input capacitance (Ciss) is 540pF at 50V, and the gate charge (Qg) is 19nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It is packaged in a TO-220-3 configuration and features through-hole mounting.
The STP10NM60N utilizes MOSFET (Metal Oxide) technology, providing efficient switching capabilities for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
10A at case temperature.
550mOhm maximum at 4A drain current and 10V gate drive.
4V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
TO-220-3 through-hole package.
19nC maximum at 10V gate voltage.