DistyParts Icon
STP10NM50N The STMicroelectronics STP10NM50N is an N-channel Power MOSFET designed for high efficiency converters. It offers a 500V drain-source voltage and 7A continuous current.
Mfr Part #:

STP10NM50N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STP10NM50N is an N-channel Power MOSFET designed for high efficiency converters. It offers a 500V drain-source voltage and 7A continuous current.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STP10NM50N Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 1223 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STP10NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

STP10NM50N Description

Short technical summary and product information.

The STMicroelectronics STP10NM50N is an N-channel Power MOSFET utilizing the second generation of MDmesh™ technology. This device is engineered for demanding high efficiency converter applications.

 

Key electrical specifications include a 500V drain-source voltage (Vds) and a maximum continuous drain current of 7A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 630mOhm at 3.5A and 10V gate-source voltage. Input capacitance (Ciss) is 450 pF at 50V, and gate charge (Qg) is a maximum of 17 nC at 10V.

 

This MOSFET features a maximum power dissipation of 70W at 25°C case temperature and operates within a junction temperature range of -55°C to 150°C. The device is available in a TO-220 package, suitable for through-hole mounting.

 

Additional features include 100% avalanche tested, low input capacitance, and low gate charge, contributing to its suitability for switching applications requiring high efficiency.

STP10NM50N Quick Information

Product Type: Power MOSFET
Canonical Name: STP10NM50N N-channel Power MOSFET
Subcategory: N-Channel

STP10NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP10NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP10NM50N Features

  • N-channel Power MOSFET technology.
  • 500V drain-source voltage rating.
  • 7A continuous drain current.
  • Low 630mOhm on-resistance.
  • TO-220 package for through-hole mounting.

STP10NM50N Applications

  • Ideal for high-voltage switching circuits.
  • Used in power supply designs.
  • Suitable for motor control applications.
  • Applicable in DC-DC converters.

STP10NM50N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

500V maximum.

What package is available?

TO-220-3 through-hole package. Also available in TO-220FP and DPAK.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What is the continuous drain current?

7A at Tc=25°C, 5A at Tc=100°C.

What is the on-resistance?

Maximum 630mOhm at 3.5A, 10V gate drive.

What is the gate charge?

17 nC at 10V gate drive.

Home
Account

Categories