| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,950 pcs
|
18950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,686 pcs
|
2686 pcs | On Request | 1 | On Request | On Request | 1244+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP10NK70ZFP is a single N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 700V and a continuous drain current capability of 8.6A.
Key electrical characteristics include a maximum on-resistance of 850mOhm at 4.5A and 10V gate drive, a gate threshold voltage of 4.5V at 100µA, and a maximum gate-source voltage of ±30V. The input capacitance (Ciss) is 2000pF at 25V, and the gate charge (Qg) is 90nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 35W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STP10NK70ZFP is available in a TO-220FP package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
700 V maximum.
8.6 A (at case temperature Tc).
850 mOhm maximum at 4.5 A and 10 V gate drive.
TO-220-3 Full Pack (TO-220FP) through-hole package.
-55°C to 150°C (junction temperature).
4.5 V maximum at 100 µA drain current.
90 nC at 10 V gate-source voltage.