| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP10NK70Z is a single N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, featuring a high drain-source voltage rating of 700V and a continuous drain current of 8.6A at case temperature.
Key electrical characteristics include a maximum on-resistance of 850mOhm at 4.5A and 10V gate drive voltage. The gate charge (Qg) is 90nC at 10V, and input capacitance (Ciss) is 2000pF at 25V. The gate-to-source voltage has a maximum rating of ±30V, with a threshold voltage of 4.5V at 100µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 150W at case temperature. It is mounted using a through-hole method and comes in a TO-220-3 package.
The STP10NK70Z utilizes MOSFET (Metal Oxide) technology, providing efficient switching capabilities for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
700V maximum.
TO-220-3 with through-hole mounting.
-55°C to 150°C junction temperature.
8.6A at case temperature.
4.5V maximum at 100µA drain current.
850mOhm maximum at 4.5A drain current and 10V gate voltage.
90nC maximum at 10V gate voltage.