| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STP10N60M2 is an N-Channel Power MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 10A at 25°C, with a typical on-resistance (Rds(on)) of 0.55 ohm.
This MOSFET utilizes MDmesh M2 technology, offering efficient power conversion with a typical gate charge of 25 nC and input capacitance of 1100 pF. The operating temperature range is -55°C to +150°C, and it has a power dissipation of 110W.
The STP10N60M2 is housed in a standard TO-220 package with through-hole mounting. Its specifications make it suitable for various power electronics applications, including Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Industrial Power Converters, Solar Inverters, and Uninterruptible Power Supplies (UPS).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
0.55 ohms typical, 0.65 ohms maximum.
10 A at 25°C, 6.3 A at 100°C.
-55°C to +150°C.
TO-220 through-hole package.
25 nC typical.
MDmesh M2.