| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,850 pcs
|
7850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP10LN80K5 is an N-channel MOSFET from STMicroelectronics, designed for power applications. It features a high drain-source breakdown voltage of 800V and a continuous drain current capability of 8A.
Key electrical characteristics include a maximum on-resistance of 630mOhm at 4A and 10V, a gate charge of 15nC at 10V, and an input capacitance of 427pF at 100V. The gate-source voltage is rated up to ±30V, with a gate threshold voltage of 5V at 100µA.
This MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 110W. It is housed in a TO-220 package and utilizes MOSFET (Metal Oxide) technology.
The STP10LN80K5 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800 V.
8 A at case temperature Tc.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
5 V at drain current of 100 µA.
Maximum 630 mΩ at 4A and 10V gate drive.
15 nC at 10 V gate voltage.