| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,850 pcs
|
1850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
253 pcs
|
253 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP100NF04 is an N-Channel MOSFET manufactured by STMicroelectronics, designed for power applications. It offers a drain-source voltage (Vdss) of 40V and can handle a continuous drain current (Tc) of up to 120A, with a maximum power dissipation of 300W (Tc).
Key electrical characteristics include a low on-resistance (Rds On) of 4.6mOhm at 50A and 10V, a gate charge (Qg) of 150nC at 10V, and an input capacitance (Ciss) of 5100pF at 25V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is packaged in a TO-220-3 configuration and features a through-hole mounting type, making it suitable for various power management circuits and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
120A at case temperature.
4.6mOhm maximum at 50A and 10V gate drive.
-55°C to 175°C junction temperature.
TO-220-3 through-hole package.
150nC at 10V.