| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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45,783 pcs
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45783 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STP100N8F6 is a high-performance N-Channel MOSFET designed for power switching applications. It offers a robust 80V drain-to-source voltage and a continuous drain current capability of 100A at 25°C.
Key electrical characteristics include a maximum on-resistance of 9mOhm at 50A and 10V gate-source voltage, and a gate threshold voltage of 4V at 250µA. The device supports a gate-source voltage range of ±20V and has an input capacitance of 5955 pF at 25V.
Packaged in a standard TO-220-3 configuration, this MOSFET is suitable for through-hole mounting. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 176W. The MOSFET technology utilized is Metal Oxide.
This component is part of the STripFET™ F6 series, offering reliable performance for various industrial and power management designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP100N8F6 has a maximum drain-to-source voltage of 80 V.
The continuous drain current is 100 A at 25°C.
Maximum RDS(on) is 9 mΩ at a drain current of 50 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 175°C.
The STP100N8F6 is available in a TO-220-3 through-hole package.
The maximum gate-source voltage is ±20 V.
Maximum gate charge is 100 nC at a gate-source voltage of 10 V.