| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
2,750 pcs
|
2750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STP100N10F7 is a single N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power applications, featuring a high drain-source voltage rating of 100V and a substantial continuous drain current capability of 80A at a case temperature of Tc.
Key electrical characteristics include a low on-resistance (Rds On) of 8mOhm at 40A and 10V gate-source voltage, and a gate charge (Qg) of 61nC at 10V. The gate threshold voltage (Vgs(th)) is 4.5V maximum at 250µA. The device operates within a temperature range of -55°C to 175°C (TJ).
Packaged in a standard TO-220-3 configuration, the STP100N10F7 is suitable for through-hole mounting. Its power dissipation is rated at a maximum of 150W (Tc). This MOSFET is part of the Metal Oxide Semiconductor technology family.
Environmental compliance includes RoHS3 compliance and MSL 1 rating. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100V.
The package is TO-220-3 with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The continuous drain current is 80A at case temperature.
The on-resistance is 8mOhm maximum at 40A drain current and 10V gate voltage.
The gate charge is 61nC maximum at 10V gate voltage.
The gate threshold voltage is 4.5V maximum at 250µA drain current.