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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The STP03D200 is a high-voltage NPN Darlington transistor manufactured by STMicroelectronics. This component is designed for applications requiring a high breakdown voltage, rated at 1200V.
Key electrical characteristics include a continuous collector current of 100mA and a power dissipation of 40W. The transistor exhibits a DC current gain (hFE) of 200 at 30mA collector current and 10V collector-emitter voltage. Its Vce saturation is a maximum of 2V at 500µA base current and 50mA collector current.
The operating temperature range for the STP03D200 is up to 150°C (TJ). It is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting.
This transistor is suitable for various power switching and amplification tasks where high voltage handling is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.50 | $10.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STP03D200 is rated for a collector-emitter voltage of 1200V.
The collector current rating is 100mA.
The maximum power dissipation is 40W.
The minimum DC current gain is 200 at 30mA collector current and 10V collector-emitter voltage.
Vce saturation is limited to 2V maximum at a base current of 500µA and collector current of 50mA.
The STP03D200 comes in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.