| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STN6N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and a continuous drain current of 5.5A at case temperature. The device features a maximum on-resistance of 1.25Ohm at a gate drive voltage of 10V and a drain current of 2A.
The MOSFET has a gate charge of 6.2nC at Vgs=10V and an input capacitance of 220pF at Vds=100V, making it suitable for efficient switching in power supplies and converters. The threshold voltage is 4V at 250µA drain current, and the maximum gate-source voltage is ±25V.
The STN6N60M2 is offered in a surface-mount TO-261-3 package (also known as SOT-223-2), which allows for compact PCB layouts. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 6W at case temperature. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
The STN6N60M2 is available in a TO-261-3 package, also known as SOT-223-2, for surface-mount mounting.
-55°C to 150°C junction temperature.
Maximum on-resistance is 1.25Ohm at Id=2A and Vgs=10V.
Maximum gate charge is 6.2nC at Vgs=10V.
Maximum threshold voltage is 4V at Id=250µA.
Maximum input capacitance is 220pF at Vds=100V.