STN6N60M2 STN6N60M2 is an N-Channel MOSFET from STMicroelectronics with a maximum drain-source voltage of 600V and continuous drain current of 5.5A. It features a low on-resistance of 1.25Ohm and is housed in a surface-mount SOT-223-2 package.
Mfr Part #:

STN6N60M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STN6N60M2 is an N-Channel MOSFET from STMicroelectronics with a maximum drain-source voltage of 600V and continuous drain current of 5.5A. It features a low on-resistance of 1.25Ohm and is housed in a surface-mount SOT-223-2 package.
✓ Total Stock: 30,000 pcs
$ Price Range: $2.56

STN6N60M2 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,000 pcs
18000 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request On Request On Request On Request

STN6N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STN6N60M2 Description

Short technical summary and product information.

The STN6N60M2 is an N-Channel MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and a continuous drain current of 5.5A at case temperature. The device features a maximum on-resistance of 1.25Ohm at a gate drive voltage of 10V and a drain current of 2A.

 

The MOSFET has a gate charge of 6.2nC at Vgs=10V and an input capacitance of 220pF at Vds=100V, making it suitable for efficient switching in power supplies and converters. The threshold voltage is 4V at 250µA drain current, and the maximum gate-source voltage is ±25V.

 

The STN6N60M2 is offered in a surface-mount TO-261-3 package (also known as SOT-223-2), which allows for compact PCB layouts. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 6W at case temperature. The device is RoHS3 compliant.

STN6N60M2 Quick Information

Product Type: MOSFET
Canonical Name: STN6N60M2 N-Channel MOSFET
Subcategory: N-Channel MOSFET

STN6N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STN6N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STN6N60M2 Features

  • 600V maximum drain-source voltage.
  • 5.5A continuous drain current rating.
  • 1.25Ohm on-resistance at 10V gate drive.
  • Surface-mount SOT-223-2 package.
  • RoHS3 compliant for environmental safety.

STN6N60M2 Applications

  • High-voltage DC-DC converter circuits.
  • Power factor correction (PFC) stages.
  • Switching power supplies and adapters.
  • Motor control and inverter applications.
  • LED lighting drivers and ballasts.

STN6N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STN6N60M2?

600V.

What package does the STN6N60M2 come in?

The STN6N60M2 is available in a TO-261-3 package, also known as SOT-223-2, for surface-mount mounting.

What is the operating temperature range of the STN6N60M2?

-55°C to 150°C junction temperature.

What is the on-resistance of the STN6N60M2?

Maximum on-resistance is 1.25Ohm at Id=2A and Vgs=10V.

What is the gate charge of the STN6N60M2?

Maximum gate charge is 6.2nC at Vgs=10V.

What is the threshold voltage of the STN6N60M2?

Maximum threshold voltage is 4V at Id=250µA.

What is the input capacitance of the STN6N60M2?

Maximum input capacitance is 220pF at Vds=100V.

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