| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,020 pcs
|
81020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STN4NF06L is a robust N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current of 4A (Tc). The MOSFET exhibits a low Rds On of 100mOhm at 1.5A and 10V gate-source voltage, ensuring efficient power transfer.
This device operates within a temperature range of -55°C to 150°C (TJ) and is constructed using MOSFET (Metal Oxide) technology. It is packaged in a SOT-223 (TO-261-4, TO-261AA) case and is designed for surface mounting.
The STN4NF06L is suitable for applications requiring a reliable N-channel switching or amplification component. Its specifications make it a viable option for power management circuits and general-purpose switching tasks where a 60V rating and moderate current handling are needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60 V.
The package is TO-261-4 (SOT-223).
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 2.8 V at 250 µA.
The on-resistance is 100 mOhm maximum at 1.5 A and 10 V.
The gate charge is 9 nC at 5 V.
The input capacitance is 340 pF at 25 V.