| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,640 pcs
|
1640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,640 pcs
|
1640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STN3PF06 is a P-Channel Power MOSFET designed for various power switching applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 2.5A at 25°C case temperature.
This MOSFET offers a typical Rds(on) of 0.18 Ω and a maximum Rds(on) of 0.20 Ω at 1.25A and 10V gate-source voltage. The gate threshold voltage is typically 2V, with a maximum of 4V. It also boasts exceptional dv/dt capability and is 100% avalanche tested.
The device operates within a temperature range of -65°C to 150°C (TJ) and has a maximum power dissipation of 2.5W at 25°C case temperature. The SOT-223 package is suitable for surface mounting.
Applications include DC-DC and DC-AC converters, and DC motor control for devices like disk drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at ID = 250µA and VGS = 0.
The STN3PF06 comes in a SOT-223 (TO-261-4/TO-261AA) surface-mount package.
The operating junction temperature range is -65°C to +150°C.
The maximum continuous drain current is 2.5A at TC = 25°C, derated to 1.5A at TC = 100°C; pulsed drain current is 10A.
The gate threshold voltage is between 2V and 4V (VDS = VGS, ID = 250µA).
The maximum RDS(on) is 220mΩ at VGS = 10V and ID = 1.5A; typical value is 180mΩ.
The maximum power dissipation is 2.5W at TC = 25°C.