STN3P6F6 The STMicroelectronics STN3P6F6 is a P-Channel MOSFET with a 60V drain-to-source voltage. It is supplied in a SOT-223 package.
Mfr Part #:

STN3P6F6

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STN3P6F6 is a P-Channel MOSFET with a 60V drain-to-source voltage. It is supplied in a SOT-223 package.
✓ Total Stock: 64,755 pcs
$ Price Range: $2.56

STN3P6F6 Available from 4 distributors

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30,252 pcs
30252 pcs On Request 1 On Request On Request 20+ On Request On Request
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28,030 pcs
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STN3P6F6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STN3P6F6 Description

Short technical summary and product information.

The STMicroelectronics STN3P6F6 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 3A at Tj. The on-resistance (Rds On) is a maximum of 160mOhm at 1.5A and 10V.

 

This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has an input capacitance (Ciss) of 340 pF at 48V and a gate charge (Qg) of 6.4 nC at 10V. The maximum gate-source voltage (Vgs) is ±20V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.

 

The device is packaged in a TO-261-4, TO-261AA format and utilizes Surface Mount technology. Its power dissipation is rated at a maximum of 2.6W (Tc). The technology employed is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are based on existing database information and may require verification.

STN3P6F6 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STN3P6F6 P-Channel MOSFET
Subcategory: P-Channel

STN3P6F6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STN3P6F6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STN3P6F6 Features

  • P-Channel MOSFET technology.
  • 60V drain-to-source voltage.
  • 3A continuous drain current.
  • 160mOhm maximum on-resistance.
  • Surface mount SOT-223 package.

STN3P6F6 Applications

  • For load switching in power supplies.
  • Used in battery protection circuits.
  • Ideal for DC-DC converter applications.
  • High-side switching in automotive systems.
  • Power management in industrial equipment.

STN3P6F6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STN3P6F6?

The maximum drain-source voltage (Vdss) is 60 V.

What package is the STN3P6F6 available in?

The STN3P6F6 is offered in a TO-261-4 / TO-261AA package, which corresponds to a surface-mount SOT-223 package.

What is the operating temperature range of the STN3P6F6?

The operating junction temperature range is -55°C to 175°C.

What is the gate charge of the STN3P6F6?

The maximum gate charge (Qg) is 6.4 nC when Vgs = 10 V.

What is the input capacitance of the STN3P6F6?

The maximum input capacitance (Ciss) is 340 pF at Vds = 48 V.

What is the on-resistance of the STN3P6F6?

The maximum on-resistance (Rds(on)) is 160 mOhm at Id = 1.5 A and Vgs = 10 V.

What is the continuous drain current rating of the STN3P6F6?

The maximum continuous drain current (Id) is 3 A at junction temperature.

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