| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
278,154 pcs
|
278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,439 pcs
|
3439 pcs | On Request | 1 | On Request | On Request | 1829+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present | |
| Storage Temperature |
The STN3NF06 is an N-channel Power MOSFET from STMicroelectronics, part of the STripFET II series. It is designed for switching applications and features exceptional dv/dt capability and 100% avalanche tested technology. This MOSFET has a drain-source breakdown voltage of 60V and a continuous drain current rating of 4A at 25°C, decreasing to 2.9A at 100°C. The static drain-source on-resistance is a low 0.07 Ohms.
The device is housed in a SOT-223 package and is supplied on tape and reel. Its thermal characteristics include a total power dissipation of 3.3W at 25°C and thermal resistance values of 38°C/W and 100°C/W for junction-to-PCB depending on the mounting footprint.
Key electrical ratings include a gate-source voltage range of ±20V and a pulsed drain current of 16A. The operating junction and storage temperatures range from -55°C to 150°C. The STN3NF06 is built using STMicroelectronics' unique "Single Feature Size™" strip-based process, ensuring high packing density and manufacturing reproducibility.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (V(BR)DSS) is 60V minimum.
The maximum continuous drain current (ID) is 4A at a case temperature of 25°C.
The maximum static drain-source on-resistance (RDS(on)) is 0.07Ω.
The STN3NF06 is available in a SOT-223 surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The gate threshold voltage (VGS(th)) ranges from 2V to 4V.