| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STN3NF06 is an N-channel Power MOSFET utilizing STMicroelectronics' unique "Single Feature Size™" strip-based process. This technology results in high packing density for low on-resistance and rugged avalanche characteristics.
Key electrical specifications include a 60V drain-source breakdown voltage (Vdss) and a maximum static drain-source on-resistance (Rds(on)) of 100mOhm at 1.5A and 10V. The continuous drain current is rated at 4A at 25°C case temperature, and 2.9A at 100°C. It also offers exceptional dv/dt capability and is 100% avalanche tested.
This MOSFET is housed in a SOT-223 package, suitable for surface mounting. The operating temperature range is -55°C to 150°C (TJ). Its design is optimized for switching applications, providing reliable performance and manufacturing reproducibility.
With its robust avalanche characteristics and high packing density, the STN3NF06 is a suitable choice for various power management and switching circuits where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at ID=250µA and VGS=0.
The STN3NF06 is available in a surface-mount SOT-223 package (TO-261-4).
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 100mOhm at ID=1.5A and VGS=10V.
The maximum gate threshold voltage is 4V at VDS=VGS and ID=250µA.
The maximum continuous drain current is 4A at case temperature 25°C, and 2.9A at 100°C.
The maximum single pulse avalanche energy is 200mJ.