| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,000 pcs
|
48000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36,693 pcs
|
36693 pcs | On Request | 1 | On Request | On Request | 1505+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STN3N40K3 is an N-Channel MOSFET belonging to the SuperMESH3™ series. It is designed for applications requiring high voltage and moderate current handling capabilities.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 1.8A at 25°C. The on-resistance (Rds On) is specified as a maximum of 3.4 Ohms at 600mA and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, and the maximum gate-source voltage (Vgs) is ±30V. Input capacitance (Ciss) is 165 pF at 50V, and gate charge (Qg) is 11 nC at 10V.
This MOSFET has a maximum power dissipation of 3.3W (Ta) and operates across a wide temperature range from -55°C to 150°C (TJ). It is constructed using Metal Oxide Semiconductor (MOSFET) technology.
The STN3N40K3 is available in a surface mount package, specifically the SOT-223 (TO-261-4, TO-261AA) configuration. It is classified under the RoHS3 compliant standard and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 400V.
The continuous drain current is 1.8A at 25°C case temperature.
The maximum on-resistance is 3.4 Ohms at 600mA drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 4.5V at 50µA drain current.
The operating junction temperature range is -55°C to 150°C.
The device is available in TO-261-4 (TO-261AA) package, with a supplier device package of SOT-223.
The maximum gate charge is 11 nC at 10V gate-source voltage.