| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STN1NF10 is an N-Channel Power MOSFET designed for switching applications. It utilizes STMicroelectronics' unique "Single Feature Size™" strip-based process, offering high packing density and low on-resistance.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of 1A at 25°C, derating to 0.6A at 100°C. The static drain-source on-resistance (Rds On) is a maximum of 0.8 Ohms at 500mA and 10V gate-source voltage. The gate threshold voltage is typically between 2V and 4V.
This MOSFET operates over a wide temperature range from -55°C to 150°C. It is packaged in a SOT-223 surface-mount case, with a total power dissipation of 2.5W at 25°C. The exceptional dv/dt capability and rugged avalanche characteristics make it suitable for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V minimum.
The STN1NF10 is available in a surface-mount SOT-223 (TO-261-4) package.
-55°C to 150°C junction temperature.
2-4V at Vds=Vgs, Id=250µA.
0.7-0.8Ω at Vgs=10V, Id=0.5A.
6nC at Vgs=10V.
1A at 25°C case temperature.