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430,476 pcs
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430476 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STM8500A is a complementary dual MOSFET from ST, integrating both an N-channel and a P-channel device. This field-effect transistor is designed for dual enhancement mode operation and comes in a standard SO-8 package.
Key electrical characteristics include a drain-source voltage rating of 55V for both channels. The N-channel offers a maximum continuous drain current of 4.5A with a typical ON-resistance of 60mΩ at 10V. The P-channel supports a maximum continuous drain current of -3A, with an ON-resistance of 95mΩ at -4.5V.
This device exhibits low ON-resistance for improved efficiency and fast switching characteristics, making it suitable for various switching and amplification applications. The complementary nature of the N and P channels simplifies circuit design in applications requiring both types of MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.52 | $5.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 55V for the N-channel and -55V for the P-channel.
The maximum continuous drain current for the N-channel is 4.5A.
The maximum continuous drain current for the P-channel is -3A.
The ON-resistance of the N-channel at 10V is a maximum of 60mΩ.
The ON-resistance of the P-channel at -4.5V is a maximum of 145mΩ.
The STM8500A is available in an SO-8 package.