| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL9P3LLH6 is a P-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Tc) of 9A. The on-resistance (Rds On) is a maximum of 15mOhm at 4.5A and 10V gate-source voltage.
This MOSFET has a maximum power dissipation of 3W (Ta) and operates within a temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate charge (Qg) of 24 nC at 4.5V and an input capacitance (Ciss) of 2615 pF at 25V.
The STL9P3LLH6 utilizes MOSFET (Metal Oxide) technology and is suitable for surface mount applications. It comes in an 8-PowerVDFN package, specifically the PowerFlat™ (3.3x3.3) supplier device package. The gate-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 1V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
9A at case temperature.
15mOhm at 4.5A drain current and 10V gate drive.
24nC at 4.5V gate voltage.
2615pF at 25V drain-source voltage.
-55°C to 150°C junction temperature.
8-PowerVDFN (PowerFlat 3.3x3.3) surface mount package.