| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,179 pcs
|
7179 pcs | On Request | 1 | On Request | On Request | 1718+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL8P2UH7 is a P-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous current rating of 8A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 22.5mOhm at 4A and 4.5V, and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The input capacitance (Ciss) is 2390 pF at 16V, with a gate charge (Qg) of 22 nC at 4.5V. The maximum gate-to-source voltage (Vgs) is ±8V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 2.4W (Tc). It is housed in a 6-PowerWDFN package, specifically the PowerFlat™ (2x2) variant, and is designed for surface mounting.
The STL8P2UH7 is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
8A
22.5 milliohms maximum at 4A drain current and 4.5V gate drive.
1V maximum at 250µA drain current.
Maximum 150°C.
PowerFlat (2x2) and 6-PowerWDFN.
Surface mount.