| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,000 pcs
|
24000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL80N75F6 is an N-channel Power MOSFET utilizing STripFET™ F6 technology with a new trench gate structure. This device offers very low on-resistance and low gate charge, making it suitable for various switching applications.
Key electrical specifications include a drain-source voltage (Vds) of 75V and a continuous drain current (Id) of 80A at 25°C case temperature. The on-resistance (Rds(on)) is a maximum of 6.3mOhm at 9A and 10V gate-source voltage. Input capacitance (Ciss) is rated at 7120 pF at 25V, and gate charge (Qg) is a maximum of 100 nC at 10V.
With a maximum power dissipation of 80W at 25°C case temperature, this MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a PowerFLAT™ (5x6) package and is designed for surface mount applications.
The STL80N75F6 is manufactured using MOSFET (Metal Oxide) technology and is classified as an N-Channel FET type. It is supplied in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 75 V.
The maximum continuous drain current is 80 A at 25 °C case temperature.
The STL80N75F6 is available in a PowerFlat (5x6) surface-mount package.
The operating junction temperature range is -55 °C to 175 °C.
The maximum on-resistance is 6.3 mΩ at 9 A drain current and 10 V gate drive.
The maximum gate-source threshold voltage is 4 V at 250 µA drain current.
The gate-source voltage range is ±20 V.