| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL7N6LF3 is a high-performance N-channel MOSFET designed for automotive applications. It offers a drain-source breakdown voltage of 60V and a continuous drain current of 20A at a case temperature.
Key electrical characteristics include a low drain-source on-resistance of 43mOhm at 3A and 10V, a gate charge of 8.7nC at 10V, and a gate-source threshold voltage of 2.5V at 250µA. The MOSFET operates with a gate-source voltage range of ±20V and utilizes Metal Oxide Semiconductor (MOSFET) technology.
This device is housed in a PowerFLAT (5x6) package, suitable for surface mount applications. It operates within a temperature range of -55°C to 175°C (TJ). The MOSFET is qualified for AEC-Q101 standards, indicating its suitability for automotive environments.
Additional specifications include a power dissipation of 52W at the case temperature and 4.3W at ambient temperature. It also features a rise time of 10.4ns and a fall time of 5.4ns, with typical turn-on delay time of 6.7ns and turn-off delay time of 32.4ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60V.
It uses a Powerflat (5x6) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum continuous drain current is 20A at case temperature.
The maximum gate charge is 8.7nC at 10V.
The maximum drain-source on-resistance is 43mOhm at 3A and 10V.
Typical rise time is 10.4ns, fall time 5.4ns, turn-on delay 6.7ns, turn-off delay 32.4ns.