| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,695 pcs
|
17695 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,842 pcs
|
1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL7N60M2 is a robust N-Channel MOSFET designed for efficient power switching. It boasts a high drain-source voltage rating of 600V and can handle a continuous drain current of 5A at a case temperature (Tc).
Key electrical characteristics include a maximum Rds On of 1.05 Ohm at 2A and 10V, an input capacitance (Ciss) of 271 pF at 100V, and a gate charge (Qg) of 8.8 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-to-source voltage of ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 67W (Tc) or 4W (Ta). It is constructed using MOSFET (Metal Oxide) technology.
The STL7N60M2 is available in a Surface Mount package, specifically the 8-PowerVDFN or PowerFLAT™ (5x5) configuration, making it suitable for compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
5 A at case temperature.
1.05 Ohm maximum at 2A, 10V.
8.8 nC maximum at 10 V.
271 pF maximum at 100 V.
8-PowerVDFN (PowerFLAT 5x5).
150 °C.