| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL6N2VH5 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 20V. This device is designed for surface mounting and comes in a compact 6-PowerWDFN package, also known as PowerFlat™ (2x2).
Key electrical characteristics include a maximum continuous drain current of 6A and a low on-resistance (Rds On) of 30mOhm at 3A and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 700mV at 250µA, with a maximum gate-to-source voltage of ±8V. Input capacitance (Ciss) is 550pF at 16V, and gate charge (Qg) is 6nC at 4.5V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.4W (Tc). It is suitable for various power switching applications where efficient and compact solutions are required.
The STL6N2VH5 is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
6-PowerWDFN (PowerFlat 2x2).
-55°C to 150°C (junction).
700mV maximum at 250µA drain current.
30mOhm maximum at 3A drain current and 4.5V gate-source voltage.
550pF maximum at Vds=16V.
6nC maximum at Vgs=4.5V.