| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,912 pcs
|
2912 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STL60NH3LL is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 30A at 25°C.
The MOSFET has a maximum on-resistance (Rds On) of 8.5mOhm when tested at 8A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 1V at 250µA, and the maximum gate-source voltage is ±16V. Its gate charge (Qg) is 24 nC maximum at 4.5V, and input capacitance (Ciss) is 1810 pF maximum at 25V.
With a maximum power dissipation of 60W (Tc), this device is suitable for various power management tasks. It operates within a temperature range of -55°C to 150°C (TJ).
The STL60NH3LL is available in a surface mount PowerFlat™ (5x6) package, identified as 8-PowerVDFN. It is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The device is available in a PowerFLAT (5x6) surface-mount package, also known as 8-PowerVDFN.
The junction temperature range is -55°C to 150°C.
The continuous drain current is 30A at Tc=25°C.
The maximum power dissipation is 60W at Tc.
The maximum on-resistance is 8.5mOhm at Id=8A, Vgs=10V.
The maximum gate threshold voltage is 1V at Id=250µA.