| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
475 pcs
|
475 pcs | On Request | 1 | On Request | On Request | 1401+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL60N3LLH5 is a high-performance N-Channel MOSFET belonging to the STripFET V series. It is designed for surface mount applications and comes in a compact PowerFlat (5x6) package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 60A at 25°C. The on-resistance (Rds On) is rated at a maximum of 7.1 mOhm at 8.5A and 10V gate-source voltage. The gate charge (Qg) is a maximum of 8nC at 4.5V, and the input capacitance (Ciss) is 1290pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 60W (Tc). The gate-source voltage (Vgs) maximum is ±22V, with a threshold voltage (Vgs(th)) of 1V at 250µA. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
Suitable for various electronic designs requiring efficient power switching, the STL60N3LLH5 is packaged in Digi-Reel for automated assembly. Its surface mount capability makes it ideal for space-constrained applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
60A at 25°C.
7.1mOhm at 8.5A, 10V.
8nC at 4.5V.
1290pF at 25V.
-55°C to 150°C (junction).
8-PowerVDFN (PowerFlat 5x6).