| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL4LN80K5 is an N-Channel enhancement-mode power MOSFET manufactured by STMicroelectronics using MDmesh K5 technology. It is designed for high-voltage switching applications requiring low gate charge and fast switching performance.
Key electrical specifications include a drain-to-source voltage (Vdss) of 800V, continuous drain current of 3A at Tc=25°C, and a maximum on-resistance of 2.6Ohm at Id=1.2A and Vgs=10V. The device features a maximum gate charge of 4nC at Vgs=10V and an input capacitance of 110pF at Vds=100V, enabling efficient high-frequency operation.
The MOSFET is rated for a maximum power dissipation of 38W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. It is supplied in an 8-PowerVDFN surface-mount package with a PowerFlat (5x6) VHV footprint, suitable for compact power supply designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800V.
The continuous drain current is 3A at Tc=25°C.
The maximum on-resistance is 2.6Ohm at Id=1.2A and Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
The STL4LN80K5 is supplied in an 8-PowerVDFN surface-mount package with a PowerFlat (5x6) VHV footprint.