| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL3N65M2 from STMicroelectronics is a single N-Channel MOSFET designed for power switching applications. This device features a high drain-source voltage rating of 650V and can handle a continuous drain current of 2.3A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 1.8 Ohms at 1A and 10V gate drive voltage. The gate charge (Qg) is 5 nC maximum at 10V, and the input capacitance (Ciss) is 155 pF maximum at 100V.
Operating within a temperature range of -55°C to 150°C (TJ), the STL3N65M2 is suitable for various environmental conditions. It has a maximum power dissipation of 22W (Tc).
This MOSFET is packaged in an 8-PowerVDFN (PowerFlat™ 3.3x3.3) format and is designed for surface mount applications, offering convenience in PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The continuous drain current (Id) is 2.3A.
The Rds On is a maximum of 1.8 Ohm at 1A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
The STL3N65M2 is supplied in an 8-PowerVDFN package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.