STL3N10F7 The STL3N10F7 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 100V drain-source breakdown voltage and a continuous drain current of 4A.
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STL3N10F7

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STL3N10F7 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 100V drain-source breakdown voltage and a continuous drain current of 4A.
✓ Total Stock: 12,000 pcs
$ Price Range: $2.56

STL3N10F7 Available from 1 distributor

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✓ Non-Authorised
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STL3N10F7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STL3N10F7 Description

Short technical summary and product information.

The STMicroelectronics STL3N10F7 is an N-Channel MOSFET featuring a drain-source breakdown voltage of 100V and a continuous drain current of 4A. It has a low Rds On resistance of 70mOhm at 2A and 10V, with a gate charge of 7.8nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is configured as a single N-Channel enhancement mode device. It is suitable for surface mounting and comes in a 6-PowerWDFN package, also referred to as PowerFlat™ (2x2).

 

Key electrical characteristics include a gate-source voltage range of ±20V and a gate-source threshold voltage of 4.5V. The device exhibits fast switching times with a rise time of 3ns and a fall time of 4ns, and typical turn-on and turn-off delay times of 6.3ns and 11ns, respectively. Its power dissipation is rated at 2.4W.

STL3N10F7 Quick Information

Product Type: MOSFET
Series: Stripfet
Canonical Name: STL3N10F7 N-Channel MOSFET
Subcategory: MOSFETs

STL3N10F7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STL3N10F7 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STL3N10F7 Features

  • 100V drain-source breakdown voltage.
  • 4A continuous drain current capability.
  • 70mOhm maximum Rds On resistance.
  • N-Channel enhancement mode MOSFET.
  • Surface mountable 6-PowerWDFN package.

STL3N10F7 Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for motor control applications.
  • Applicable in power management systems.

STL3N10F7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STL3N10F7?

The drain-source breakdown voltage is 100V.

What is the continuous drain current for the STL3N10F7?

The continuous drain current is 4A.

What is the Rds On resistance of the STL3N10F7?

The Rds On resistance is a maximum of 70mOhm at 2A and 10V.

What is the operating temperature range for the STL3N10F7?

The operating temperature range is -55°C to 150°C.

What package type is the STL3N10F7 available in?

The STL3N10F7 is available in a 6-PowerWDFN package, also known as PowerFlat™ (2x2).

Is the STL3N10F7 RoHS compliant?

Yes, the STL3N10F7 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the STL3N10F7?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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