| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The STMicroelectronics STL35N6F3 is an N-channel enhancement mode Power MOSFET utilizing STripFET™ III technology. This device is designed for switching applications, offering a low on-resistance of 22mΩ at 3A, 10V and a low gate charge for superior switching performance.
Key electrical ratings include a 60V drain-source voltage (Vds) and a ±20V gate-source voltage (Vgs). The continuous drain current is rated at 35A at 25°C case temperature. Thermal performance is supported by a junction-to-case thermal resistance of 1.9°C/W, with a maximum power dissipation of 80W at 25°C case temperature.
This MOSFET is housed in a compact PowerFLAT™ 5x6 package, suitable for surface mounting. The operating temperature range is -55°C to 175°C (TJ). It is also 100% avalanched rated, providing robustness in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STL35N6F3 is 60V.
The continuous drain current rating for the STL35N6F3 is 35A at 25°C case temperature.
The maximum on-resistance (Rds On) for the STL35N6F3 is 22mΩ at 3A, 10V.
The operating temperature range (TJ) for the STL35N6F3 is -55°C to 175°C.
The STL35N6F3 is available in a PowerFLAT™ 5x6 package, also referred to as 8-PowerVDFN, suitable for surface mounting.