| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL33N65M2 is an N-Channel power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current rating of 20A at case temperature. The device offers a low on-resistance of 154mOhm maximum at 10V gate drive, ensuring efficient power conversion.
Key electrical characteristics include a maximum gate threshold voltage of 4V at 250µA drain current, input capacitance of 1790pF at 100V, and total gate charge of 41.5nC at 10V. The device can dissipate up to 150W (at case temperature) and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a surface-mount 8-PowerVDFN package, also known as PowerFlat 8x8 HV, which provides excellent thermal performance and a compact footprint for space-constrained designs. Mounting type is surface mount.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
20A at case temperature.
154mOhm maximum at 10A drain current and 10V gate drive.
-55°C to 150°C (junction).
8-PowerVDFN surface mount package (PowerFlat 8x8 HV).
4V maximum at 250µA drain current.