| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
368 pcs
|
368 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL33N60M2 is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor technology family. It is designed for high-voltage applications, featuring a maximum drain-to-source voltage (Vdss) of 600V and a continuous current capability of 22A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 135mOhm at 10.75A and 10V gate-source voltage, and a gate charge (Qg) of 47nC at 10V. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc).
This MOSFET is housed in a Surface Mount package, specifically the 8-PowerVDFN, with a supplier device package designation of PowerFlat™ (8x8) HV. Its robust construction and specifications make it suitable for various power switching and control applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600 V.
The continuous current rating is 22A (Tc).
The Rds On (Max) is 135mOhm at 10.75A and 10V Vgs.
The operating temperature range is 150°C (TJ).
The STL33N60M2 is in an 8-PowerVDFN package.
It is a Surface Mount device.