| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,790 pcs
|
1790 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL33N60DM2 is an N-Channel MOSFET belonging to the PowerFLAT HV family. This device is rated for a maximum drain-source voltage (Vdss) of 600V and can handle a continuous drain current of 21A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 140mOhm at 10.5A and 10V, a gate charge (Qg) of 43nC at 10V, and an input capacitance (Ciss) of 1870pF at 100V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is available in a Surface Mount package, specifically the 8-PowerVDFN, also referred to as PowerFlat™ (8x8) HV.
The STL33N60DM2 is designed for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
8-PowerVDFN with PowerFlat (8x8) HV footprint.
-55°C to 150°C junction temperature.
140mOhm at 10.5A and 10V.
43nC at 10V.
1870pF at 100V.
150W at case temperature.