| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL31N65M5 is a high-performance N-Channel MOSFET designed for demanding power applications. It offers a robust 650V Drain-Source Voltage (Vdss) and a continuous drain current of up to 15A (Tc). The MOSFET exhibits a low on-resistance of 162mOhm at 11A and 10V, ensuring efficient power transfer.
With a maximum gate charge of 45 nC at 10V, this device is suitable for various switching applications. It operates at temperatures up to 150°C (TJ) and features a low input capacitance of 1865 pF at 100V. The STL31N65M5 is available in a compact 8-PowerVDFN surface mount package, also known as PowerFlat™ (8x8) HV, facilitating board space optimization.
This MOSFET is designed with advanced technology for reliable performance in power conversion and management systems. Its specifications make it a suitable component for power supplies, motor control, and other high-voltage circuits requiring efficient and robust switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
150°C (junction temperature).
8-PowerVDFN surface mount package with PowerFlat (8x8) HV supplier package.
15A at case temperature (Tc) and 2.8A at ambient temperature (Ta).
162mOhm maximum at 11A drain current and 10V gate drive.
45 nC at 10V gate-source voltage.
10V to achieve minimum on-resistance.