| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL26NM60N from STMicroelectronics is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It offers a continuous drain current of 2.7A (Ta) and 19A (Tc) at 25°C, with a maximum on-resistance (Rds On) of 185mΩ at 10A and 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a gate charge (Qg) of 60nC at 10V. The input capacitance (Ciss) is a maximum of 1800pF at 50V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage (Vgs) is ±30V.
Packaged in an 8-PowerVDFN surface mount package, the STL26NM60N utilizes MOSFET (Metal Oxide) technology. Its maximum power dissipation is 125mW (Ta) and 3W (Tc). The series is MDmesh™ II, and the supplier device package is PowerFlat™ (8x8) HV.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
19A at case temperature and 2.7A at ambient temperature
8-PowerVDFN, also known as PowerFlat™ (8x8) HV
150°C
Up to 5V at 250µA drain current
3 watts at case temperature and 125 milliwatts at ambient temperature
It belongs to the MDmesh™ II series