| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STL26N65DM2 is an N-Channel MOSFET with a high breakdown voltage of 650V. It is designed for power applications, offering a continuous drain current of 20A at 25°C and a maximum power dissipation of 140W.
The MOSFET has a low on-resistance of 206mOhm at 10A and 10V, with a gate threshold voltage of 5V at 250µA. The input capacitance is rated at 1480pF at 100V, and the gate charge is 35.5nC at 10V. The device operates over a temperature range of -55°C to 150°C.
This component utilizes MOSFET (Metal Oxide) technology and is housed in a surface mountable 8-PowerVDFN package, specifically the PowerFlat™ (8x8) HV supplier device package. It is suitable for various power switching and control applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
It comes in an 8-PowerVDFN surface-mount package with a PowerFlat HV (8x8) footprint.
-55°C to 150°C junction temperature.
20A at 25°C case temperature.
206mOhm at 10A drain current and 10V gate drive.
35.5nC at 10V gate voltage.
140W at case temperature.