| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,960 pcs
|
2960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL260N4LF7 from STMicroelectronics is a high-performance N-Channel MOSFET. It is rated for a drain-source voltage (Vdss) of 40V and can handle a continuous drain current of 120A at case temperature.
This MOSFET offers a low on-resistance (Rds On) of 1.1mOhm maximum at 25A and 10V gate drive voltage, with a typical value of 0.00085 Ohm. The gate charge (Qg) is 42 nC maximum at 4.5V, and the input capacitance (Ciss) is 6000 pF maximum at 25V.
Designed for surface mounting, the STL260N4LF7 comes in an 8-PowerVDFN package, also referred to as PowerFlat™ (5x6). It operates within a wide temperature range of -55°C to 175°C (TJ). The technology used is MOSFET (Metal Oxide).
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA and a maximum gate-source voltage (Vgs) of ±20V. The maximum power dissipation is 188W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
120 A at Tc.
1.1 mOhm maximum at 25 A and 10 V.
-55°C to 175°C (junction).
8-PowerVDFN (PowerFlat 5x6) surface mount.
42 nC at 4.5 V.
6000 pF at 25 V.