| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STL24NM60N from STMicroelectronics is an N-channel Power MOSFET utilizing MDmesh II technology. This device is suitable for demanding high efficiency converters, offering a low on-resistance and gate charge.
Key electrical specifications include a drain-source voltage (Vds) of 600V, a maximum continuous drain current (Id) of 16A at 25°C case temperature, and a maximum on-resistance (Rds On) of 215mOhm at 8A and 10V gate-source voltage.
The MOSFET operates at a maximum junction temperature of 150°C. It is housed in a PowerFLAT™ 8x8 HV package and is designed for surface mount applications.
This device is 100% avalanche tested and features low input capacitance and gate charge, making it ideal for switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STL24NM60N is 600V.
The STL24NM60N has a continuous drain current of 16A at 25°C case temperature and 3.3A at 25°C ambient temperature.
The maximum on-resistance (Rds On) for the STL24NM60N is 215mOhm when measured at 8A drain current and 10V gate-source voltage.
The STL24NM60N can operate at a maximum junction temperature of 150°C.
The STL24NM60N is supplied in a PowerFLAT™ 8x8 HV package, also referred to as 8-PowerVDFN, for surface mounting.